Optimization of Pulsed Laser Deposition Parameters for Single-Crystalline (011) Oriented Tetragonal Pzt Thin Films

Abstract

Recent advances in nanotechnology applications require the processing of high-quality thin films. A systematic study of the optimization of Pulsed deposition parameters for (110) oriented tetragonal PZT thin films is reported in this work. Prior to film deposition, a highly tetragonal Pb(Zr_0.5, Ti_0.95) or PZT 05/95 was selected to be deposited on (110) oriented Strontium titanate, SrTiO₃ substrate, STO(110) to insure small compressive misfit strain. Unlike SRO, the LSOM bottom electrode was then successfully grown at 620 °C, 1.0 J/cm² and a target-substrate distance of 3.9 cm. Finally, deposition parameters of PZT were progressively optimized through monitoring film morphological changes. Monocrystalline PZT films of different thicknesses with layer €“by €“layer growth mode were finally realized at a deposition temperature of 550 °C, laser energy of 1.0 J/cm², background pressure of 200 mTorr O₂, while deposition rate was 3 Hz and target-substrate distance of 3.1 cm. The optimal film growth rate was finally estimated to be 0.3 nm/100 Pulses.  

Keyword: PZT, SRO, LSOM, Thin Pulsed Laser Deposition, Epitaxy, Film