Effects of Aluminium and Tungsten Co-Doping on the Optical Properties of VO2 Based Thin Films

Authors

  • Cephas J Lyobha College of Natural and Mathematical Sciences, Physics Department, The University of Dodoma, P. O. Box 338, Dodoma, Tanzania
  • Nuru R Mlyuka Solar Energy Group, Physics Department, University of Dar es Salaam, P. O. Box 35063 Dar es Salaam, Tanzania
  • Margaret E Samiji Solar Energy Group, Physics Department, University of Dar es Salaam, P. O. Box 35063 Dar es Salaam, Tanzania

Abstract

Aluminium and tungsten co-doped vanadium dioxide (VO2:W:Al) thin films were deposited by DC reactive magnetron sputtering technique. In this work we report on the effects of aluminium and tungsten co €“doping on the optical properties of vanadium dioxide (VO2) based thin films with a view of combining both increased luminous transmittance (Tlum) and lowered transition temperature (Ï„c). The effect of aluminium and tungsten co-doping on semiconductor-metal transition of vanadium dioxide films was investigated and compared with tungsten doped and undopedVO2films. Spectral transmittances of the films were obtained using Shimadzu SolidSpec-3700 DUV UV-VIS-NIR spectrophotometer. The results revealed that the transmittance of tungsten and aluminium co €“doped vanadium dioxide using two Al pellets showed a peak at about 54% in the visible spectral range with fairly good switching characteristics and a transition temperature of 61 oC.

Keywords: Transition temperature, luminous transmittance, tungsten-aluminium co-doping, vanadium dioxide

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Published

2018-12-31

Issue

Vol. 44 No. 4 (2018)

Section

Articles