Hall Effect Parameters of Aluminium and Tungsten Co-Doped VO2 Thin Films

Authors

  • Mohamed Mussa Solar Energy Group, Department of Physics, College of Natural and Applied Sciences, University of Dar es Salaam, P. O. Box 35063, Dar es Salaam, Tanzania
  • Nuru R Mlyuka Solar Energy Group, Department of Physics, College of Natural and Applied Sciences, University of Dar es Salaam, P. O. Box 35063, Dar es Salaam, Tanzania
  • Margaret E Samiji Solar Energy Group, Department of Physics, College of Natural and Applied Sciences, University of Dar es Salaam, P. O. Box 35063, Dar es Salaam, Tanzania

Abstract

The Hall Effect parameters of Al and W co-doped VO2 thin films were studied in order to explain the effect of co-doping on the electrical properties of thermochromic VO2 films. The carrier concentrations and conductivity of the films were found to increase with increase in temperature while carrier mobility decreased reaching a minimum around the transition temperature then slightly rose and became stable at high temperatures. Tungsten doped films displayed higher carrier concentrations and conductivity on both sides of the metal insulator transition and lower mobility compared to undoped and Al and W co-doped VO2 thin films.

Keywords: Vanadium oxide, Hall effect, Carrer concentration, carrier mobility

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Published

2018-12-31

Issue

Vol. 44 No. 4 (2018)

Section

Articles