Optimization of Zinc to Tin Ratio in a Sol Gel Precursor Solution on the Growth and Properties of Annealed CZTS Thin Films

Authors

  • Justine John Tibaijuka Department of Physics, College of Natural and Applied Sciences, University of Dar es Salaam P. O. Box 35063, Dar es Salaam Tanzania
  • Margaret E Samiji Department of Physics, College of Natural and Applied Sciences, University of Dar es Salaam P. O. Box 35063, Dar es Salaam Tanzania
  • Nuru R Mlyuka Department of Physics, College of Natural and Applied Sciences, University of Dar es Salaam P. O. Box 35063, Dar es Salaam Tanzania

Abstract

CZTS thin films were deposited by sol–gel spin coating method using precursor solutions prepared
by dissolving copper acetate dihydrate, zinc acetate dihydrate, tin chloride and thiourea in
methanol and monoethylamine then annealed in RTP furnace at 500 °C. Sol–gel precursor
solutions were prepared with different Zn/Sn in a precursor solution and were annealed at different
time intervals; and their effects on the optical and electrical properties of CZTS (Cu2ZnSnS4) films
were investigated. The optical band-gap values were estimated to be between 1.30 and 1.88 eV
while the absorption coefficients were in the range of 104 cm–1 in the visible region. The resistivity
and carrier concentrations ranged from 13.12 to 2634 kΩ/□ and 1017 to 1020 cm−3, respectively.
The influence of Zn/Sn ratio and annealing time on structural properties of CZTS thin films are
also discussed.

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Published

2025-03-28

Issue

Vol. 44 No. 4 (2018)

Section

Articles