Effects of Selenized DC Sputtered Precursor Stacking Orders on the Properties of Cu2ZnSnSe4 Absorber Layer for Thin Film Solar Cells

Authors

  • Hezekiah B Sawa Department of Physics, University of Dar es Salaam, P. O. Box 35063, Dar es Salaam, Tanzania
  • Margaret E Samiji Department of Physics, University of Dar es Salaam, P. O. Box 35063, Dar es Salaam, Tanzania
  • Nuru R Mlyuka Department of Physics, University of Dar es Salaam, P. O. Box 35063, Dar es Salaam, Tanzania

Abstract

This study investigated the effects of selenized DC sputtered precursor stacking orders on the
structural, electrical and optical properties of copper zinc tin selenide (CZTSe) absorber layer for
thin film solar cells. The precursors were deposited sequentially on the soda lime glass substrate at
room temperature by DC magnetron sputtering. The precursors were selenized by annealing in an
atmosphere containing selenium pellets and nitrogen gas. The structural, morphological, optical
and electrical properties were respectively characterized using X-Ray Diffractometer (XRD),
atomic force microscopy (AFM), UV/VIS/NIR lambda 9/19 spectrophotometer, Hall Effect
measurement system (HMS 3000) and a four point probe system. CZTSe samples made up of
three different stacking orders with configuration Mo/Cu/Zn/Sn (stack A), Mo/Cu/Sn/Zn (stack B)
and Mo/Zn/Sn/Cu (stack C) were prepared. All the films showed kesterite peaks with major peak
oriented along (112) plane at an angle of 2 ≈ 27.2°. Stack C was a best stacking order since it had
the largest grain size 67 nm, highest carrier concentration 3.4  1020 cm–3 and the lowest sheet
resistance of 6.4 /□. Also this film demonstrated higher average absorption coefficient of about
6.84  104 cm–1. Furthermore, the films were observed to have a smooth surface and well
compacted with average surface roughness of about 16 nm without voids.

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Published

2025-03-28

Issue

Vol. 44 No. 4 (2018)

Section

Articles